KMY 20M磁阻传感器
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KMY 20M磁阻传感器
文本预览
Magnetic Field Sensors
KMY 20 M
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensor consists of the chip 174B coated
with thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. Magnetic fields vertical to the chip surface have no influence on the output
voltage.
Special feature
In contrast to KMY 20 S, sensor KMY 20 M features a permanent magnet integrated in the
housing. The compact sensor is ready to use. No external auxillary fields are required for
safe operation in a disturbing field up to 30 kA/m.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMY 20 M
Technical data
Applications
Absolute maximum ratings
- detection of weak magnetic fields,
e.g. earth magnetic field
Parameter Symbol Unit Value
- contactless mechanical switch
- displacement measurement with
Supply voltage VB V 12 high resolution
Total power dissipation Pto mW 120 - revolution speed detection
Operating temperature range Tamb °C -40 ... + 125 on ferromagnetic gear wheels
Storage temperature range Tstg °C -65 ... +150 - contactless angle measurement
Disturbing field Hd kA/m ≤ 30 - mga el ava sun ric ea mll ey ns te perated current
Electrical characteristics (T = 25°C)
amb
U
0
[mV/V]
H x = 3 kA/m
Parameter Symbol Unit Value 8
6
B Or pid eg ne c r ire cs uis itt a sn ec ne s itivity R SB V (mV/V)/(k kO A/h mm ) 51 .. 54 ±.. 12 .. 52 4 H x = 1 kA/m
Output voltage range ∆VO /VB mV/V 18.0 ± 4.0 2
Hysteresis of output voltage VO H /VB µV/V ≤ 50
Offset voltage VOFF /VB mV/V ≤ ± 1.5 -4 -3 -2 -1 1 2 3 H y [kA/4 m]
Permanent auxiliary field Hx kA/m 1.5 ± 0.4 -2
-4
Temperature coefficients ( - 25 °C < T < 125 °C)
amb -6
of
-8
Parameter Symbol Unit Value
Output voltage versus field component Hy
Bridge resistance TCBR %/K 0.30 ± 0.05 for different stabilizing magnetic fields Hx
Open circuit sensitivity
(VB = const) TCSV %/K -0.25 ± 0.05
(IB = const) TCSI %/K 0.05 ± 0.05
Offset voltage TCOFF (µV/V)/K ≤ ± 3
Difference of offset voltage ∆TCOFF (µV/V)/K ≤ ± 0.5
for sensor pair
Hausing KMY 20: SOT-223-S
2 KMY 20 M
We also offer selected
pairs of KMY 20 M.
These pairs have a
similar temperature
characteristic of the
voltage offset and are
well suited for differential
measuring techniques.
The temperature drift of
the magnetoresistive
sensor is strongly
reduced by applying this
technique.
SOT-223-S
1: +V0 2: -V0 V0: Ausgangsspannung
metrische Dimensionen 3: +VΒ 4: -VB VB: Betriebsspannung
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de 7.12.01
KMY 20 M
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensor consists of the chip 174B coated
with thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. Magnetic fields vertical to the chip surface have no influence on the output
voltage.
Special feature
In contrast to KMY 20 S, sensor KMY 20 M features a permanent magnet integrated in the
housing. The compact sensor is ready to use. No external auxillary fields are required for
safe operation in a disturbing field up to 30 kA/m.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMY 20 M
Technical data
Applications
Absolute maximum ratings
- detection of weak magnetic fields,
e.g. earth magnetic field
Parameter Symbol Unit Value
- contactless mechanical switch
- displacement measurement with
Supply voltage VB V 12 high resolution
Total power dissipation Pto mW 120 - revolution speed detection
Operating temperature range Tamb °C -40 ... + 125 on ferromagnetic gear wheels
Storage temperature range Tstg °C -65 ... +150 - contactless angle measurement
Disturbing field Hd kA/m ≤ 30 - mga el ava sun ric ea mll ey ns te perated current
Electrical characteristics (T = 25°C)
amb
U
0
[mV/V]
H x = 3 kA/m
Parameter Symbol Unit Value 8
6
B Or pid eg ne c r ire cs uis itt a sn ec ne s itivity R SB V (mV/V)/(k kO A/h mm ) 51 .. 54 ±.. 12 .. 52 4 H x = 1 kA/m
Output voltage range ∆VO /VB mV/V 18.0 ± 4.0 2
Hysteresis of output voltage VO H /VB µV/V ≤ 50
Offset voltage VOFF /VB mV/V ≤ ± 1.5 -4 -3 -2 -1 1 2 3 H y [kA/4 m]
Permanent auxiliary field Hx kA/m 1.5 ± 0.4 -2
-4
Temperature coefficients ( - 25 °C < T < 125 °C)
amb -6
of
-8
Parameter Symbol Unit Value
Output voltage versus field component Hy
Bridge resistance TCBR %/K 0.30 ± 0.05 for different stabilizing magnetic fields Hx
Open circuit sensitivity
(VB = const) TCSV %/K -0.25 ± 0.05
(IB = const) TCSI %/K 0.05 ± 0.05
Offset voltage TCOFF (µV/V)/K ≤ ± 3
Difference of offset voltage ∆TCOFF (µV/V)/K ≤ ± 0.5
for sensor pair
Hausing KMY 20: SOT-223-S
2 KMY 20 M
We also offer selected
pairs of KMY 20 M.
These pairs have a
similar temperature
characteristic of the
voltage offset and are
well suited for differential
measuring techniques.
The temperature drift of
the magnetoresistive
sensor is strongly
reduced by applying this
technique.
SOT-223-S
1: +V0 2: -V0 V0: Ausgangsspannung
metrische Dimensionen 3: +VΒ 4: -VB VB: Betriebsspannung
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de 7.12.01
AIGCKMY 20M是一款磁阻传感器，其中"M"通常代表Metal-Oxide-Semiconductor (金属氧化物半导体) 磁阻效应，这是一种利用材料（如金属或合金）电阻率随磁场变化特性来检测磁场强度的技术。在这款具体型号中，"KMY"可能是生产厂商、产品系列或者商标的缩写，而"20M"可能表示该磁阻传感器的工作频率范围、测量精度等级或者是最大允许工作电流等规格参数中的某一项。
作为一款磁阻传感器，KMY 20M广泛应用于各种需要高精度磁场检测的场合，例如电机控制、位置反馈、速度和转速监测、车辆防抱死制动系统(ABS)、工业自动化设备以及家用电器等领域。它通过非接触方式感应磁场，具有响应速度快、抗干扰性能好以及线性度高等优点。用户在使用时需要按照相应的数据手册进行接线与参数设置，并确保工作环境符合其额定条件。
