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KMY Z20S磁阻传感器
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KMY Z20S磁阻传感器
文本预览
Magnetic Field Sensors
KMY 20 S / KMZ 20 S
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensors consist of chip 174B covered with
thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output voltage
is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. See information for KMZ 20 M1 / KMY 20 M. Magnetic fields vertical to the chip
surface have no influence on the output voltage.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMY 20 S / KMZ 20 S
Technical data
Absolute maximum ratings Applications
Parameter Symbol Unit Value - detection of weak magnetic fields,
e.g. earth magnetic field
Supply voltage VB V 12 - contactless mechanical switch
Total power dissipation Pto mW 120 - displacement measurement with
high resolution
Operating temperature range Tamb °C -40 ... + 125
- revolution speed detection
Storage temperature range Tstg °C -65 ... +150
on ferromagnetic gear wheels
- contactless angle measurement
Electrical characteristics (T = 25°C, H = 3 kA/m) - galvanically seperated current
amb x
measurement
Parameter Symbol Unit Value
U [mV/V]
0
Bridge resistance RB kOhm 1.4 .. 2.0
8
H x = 3 kA/m
Open circuit sensitivity SV (mV/V)/(kA/m) 4.7 ± 1.0
Output voltage range ∆VO /VB mV/V 20.0 ± 4.0 6
Hysteresis of output voltage VO H/VB µV/V ≤ 50 4 H x = 1 kA/m
Offset voltage VOFF /VB mV/V ≤ ± 1.0
2
Temperature coefficients ( - 25 °C < T < 125 °C) -4 -3 -2 -1 1 2 3 4
amb H y [kA/m]
of -2
Parameter Symbol Unit Value
-4
Bridge resistance TCBR %/K 0.30 ± 0.05 -6
Open circuit sensitivity -8
(VB = const) TCSV %/K -0.30 ± 0.05
Offset voltage
(IB = const) TCT OC FS FI (µV/V% )/ /KK 0.00
≤
±
±
0 3. 05 O fou rt p du ift f ev ro el nta t g se ta v be ilr izs iu ns g f mie ald g nco em ticp fo ien le dn st HH xy
Housing of KMY 20: SOT-223-S Housing of KMZ 20: E-Line 4-Pin
SOT-223-S
1: +V0 2: -V0 V0: Output voltage
3: +VΒ 4: -VB VB: Supply voltage metric dimensions
E-Line 4-Pin
1: +V0 3: -V0 V0: Output voltage
2: -VB 4: +VB VB: Supply voltage
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
7.12.01
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de
KMY 20 S / KMZ 20 S
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensors consist of chip 174B covered with
thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output voltage
is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. See information for KMZ 20 M1 / KMY 20 M. Magnetic fields vertical to the chip
surface have no influence on the output voltage.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMY 20 S / KMZ 20 S
Technical data
Absolute maximum ratings Applications
Parameter Symbol Unit Value - detection of weak magnetic fields,
e.g. earth magnetic field
Supply voltage VB V 12 - contactless mechanical switch
Total power dissipation Pto mW 120 - displacement measurement with
high resolution
Operating temperature range Tamb °C -40 ... + 125
- revolution speed detection
Storage temperature range Tstg °C -65 ... +150
on ferromagnetic gear wheels
- contactless angle measurement
Electrical characteristics (T = 25°C, H = 3 kA/m) - galvanically seperated current
amb x
measurement
Parameter Symbol Unit Value
U [mV/V]
0
Bridge resistance RB kOhm 1.4 .. 2.0
8
H x = 3 kA/m
Open circuit sensitivity SV (mV/V)/(kA/m) 4.7 ± 1.0
Output voltage range ∆VO /VB mV/V 20.0 ± 4.0 6
Hysteresis of output voltage VO H/VB µV/V ≤ 50 4 H x = 1 kA/m
Offset voltage VOFF /VB mV/V ≤ ± 1.0
2
Temperature coefficients ( - 25 °C < T < 125 °C) -4 -3 -2 -1 1 2 3 4
amb H y [kA/m]
of -2
Parameter Symbol Unit Value
-4
Bridge resistance TCBR %/K 0.30 ± 0.05 -6
Open circuit sensitivity -8
(VB = const) TCSV %/K -0.30 ± 0.05
Offset voltage
(IB = const) TCT OC FS FI (µV/V% )/ /KK 0.00
≤
±
±
0 3. 05 O fou rt p du ift f ev ro el nta t g se ta v be ilr izs iu ns g f mie ald g nco em ticp fo ien le dn st HH xy
Housing of KMY 20: SOT-223-S Housing of KMZ 20: E-Line 4-Pin
SOT-223-S
1: +V0 2: -V0 V0: Output voltage
3: +VΒ 4: -VB VB: Supply voltage metric dimensions
E-Line 4-Pin
1: +V0 3: -V0 V0: Output voltage
2: -VB 4: +VB VB: Supply voltage
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
7.12.01
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de
AIGC您好！KMY Z20S是一款专为电气行业设计的磁阻传感器（Magnetic Resistance Sensor），它属于一种非接触式位移传感器类型，利用霍尔效应或磁敏电阻材料对磁场变化的敏感特性来检测物体在磁场中的位置、移动距离或者磁场强度等参数。具体来说，Z20S可能是该型号传感器的产品系列名，其中"Z"和"20"可能代表产品系列号或技术规格特征，而"S"则可能是"Sensor"（传感器）的缩写。
此款磁阻传感器适用于广泛的应用场景，如电机控制、自动化设备、家用电器、工业机器人以及其他需要精确测量位置或运动状态的场合。通过集成到控制系统中，能够实现对被测物体位置的实时监控和反馈，从而提高设备的精度、稳定性和工作效率。如果您有关于KMY Z20S磁阻传感器的具体应用、安装方法、技术参数或选型疑问，请详细告知，我们将为您提供更专业的帮助。
