KMY20M1磁阻传感器
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KMY20M1磁阻传感器
文本预览
Magnetic Field Sensors
KMZ 20 M1
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensor consists of the chip 174B covered
with thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. Magnetic fields vertical to the chip surface have no influence on the output
voltage.
Special feature
The sensor KMZ 20 M1 has a small permanent magnet which is glued on the package.
The sensor is ready to use. No external auxillary fields are required for safe operation in a
disturbing field up to 30 kA/m.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMZ 20 M1
Technical data
Absolute maximum ratings Applications
Parameter Symbol Unit Value - detection of weak magnetic fields,
e.g. earth magnetic field
- contactless mechanical switch
Supply voltage VB V 12
- displacement measurement with
Total power dissipation Pto mW 120
high resolution
Operating temperature range Tamb °C -40 ... + 125 - revolution speed detection
Storage temperature range Tstg °C -65 ... +150 on ferromagnetic gear wheels
Disturbing field Hd kA/m ≤ 30 -
-
c go an lvt aa nc it cle as lls
y
a sn eg pl ee
r
am tee da s cu ur re rm ene tn t
measurement
Electrical characteristics (T
amb
= 25°C)
U
0
[mV/V]
H x = 3 kA/m
Parameter Symbol Unit Value 8
6
Bridge resistance RB kOhm 1.4 .. 2.2
Open circuit sensitivity SV (mV/V)/(kA/m) 4.0 ± 0.8 4 H x = 1 kA/m
Output voltage range ∆VO /VB mV/V 20.0 ± 4.0
2
Hysteresis of output voltage VO H /VB µV/V ≤ 50
O Peff rs me at nvo el nta t g ae u xiliary field VOFF /V HB x m kAV // mV 3≤ .6 ± ± 1 0.0 .4 -4 -3 -2 -1 -2 1 2 3 H y [kA/4 m]
-4
Temperature coefficients ( - 25 °C < T < 125 °C)
amb -6
of
Parameter Symbol Unit Value -8
Bridge resistance TCBR %/K 0.30 ± 0.05 Output voltage versus field component Hy
Open circuit sensitivity
for different stabilizing magnetic fields Hx
(VB = const) TCSV %/K -0.25 ± 0.05
(IB = const) TCSI %/K 0.05 ± 0.05
Offset voltage TCOFF (µV/V)/K ≤ ± 3
Difference of offset voltage ∆TCOFF (µV/V)/K ≤ ± 0.5
for sensor pair
H ousing of KMZ 20 M: 2 KMZ 20 M1
E -Line 4-Pin
We also offer selected pairs of
1: +V o 3: -V o KMZ 20 M1. These pairs have a
2: - V B 4: +V B similar temperature characteristic
of the voltage offset and are well
V o : output voltage suited for differential measuring
V B : input voltage techniques. The temperature drift
of the magnetoresistive sensor is
strongly reduced by applying this
technique.
metric dimensions
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de
KMZ 20 M1
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensor consists of the chip 174B covered
with thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. Magnetic fields vertical to the chip surface have no influence on the output
voltage.
Special feature
The sensor KMZ 20 M1 has a small permanent magnet which is glued on the package.
The sensor is ready to use. No external auxillary fields are required for safe operation in a
disturbing field up to 30 kA/m.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMZ 20 M1
Technical data
Absolute maximum ratings Applications
Parameter Symbol Unit Value - detection of weak magnetic fields,
e.g. earth magnetic field
- contactless mechanical switch
Supply voltage VB V 12
- displacement measurement with
Total power dissipation Pto mW 120
high resolution
Operating temperature range Tamb °C -40 ... + 125 - revolution speed detection
Storage temperature range Tstg °C -65 ... +150 on ferromagnetic gear wheels
Disturbing field Hd kA/m ≤ 30 -
-
c go an lvt aa nc it cle as lls
y
a sn eg pl ee
r
am tee da s cu ur re rm ene tn t
measurement
Electrical characteristics (T
amb
= 25°C)
U
0
[mV/V]
H x = 3 kA/m
Parameter Symbol Unit Value 8
6
Bridge resistance RB kOhm 1.4 .. 2.2
Open circuit sensitivity SV (mV/V)/(kA/m) 4.0 ± 0.8 4 H x = 1 kA/m
Output voltage range ∆VO /VB mV/V 20.0 ± 4.0
2
Hysteresis of output voltage VO H /VB µV/V ≤ 50
O Peff rs me at nvo el nta t g ae u xiliary field VOFF /V HB x m kAV // mV 3≤ .6 ± ± 1 0.0 .4 -4 -3 -2 -1 -2 1 2 3 H y [kA/4 m]
-4
Temperature coefficients ( - 25 °C < T < 125 °C)
amb -6
of
Parameter Symbol Unit Value -8
Bridge resistance TCBR %/K 0.30 ± 0.05 Output voltage versus field component Hy
Open circuit sensitivity
for different stabilizing magnetic fields Hx
(VB = const) TCSV %/K -0.25 ± 0.05
(IB = const) TCSI %/K 0.05 ± 0.05
Offset voltage TCOFF (µV/V)/K ≤ ± 3
Difference of offset voltage ∆TCOFF (µV/V)/K ≤ ± 0.5
for sensor pair
H ousing of KMZ 20 M: 2 KMZ 20 M1
E -Line 4-Pin
We also offer selected pairs of
1: +V o 3: -V o KMZ 20 M1. These pairs have a
2: - V B 4: +V B similar temperature characteristic
of the voltage offset and are well
V o : output voltage suited for differential measuring
V B : input voltage techniques. The temperature drift
of the magnetoresistive sensor is
strongly reduced by applying this
technique.
metric dimensions
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de
AIGCKMY20M1是一种特定型号的磁阻传感器（MR Sensor），它属于磁敏电阻的一种。该产品由一家名为KMY（具体公司未在标题中提及，可能是某家专注于磁性传感器开发和生产的制造商）的公司所生产。其型号"20M1"可能代表了以下含义：
- "20"：这可能是该系列产品的代号或者是工作频率、测量范围、灵敏度等相关参数的简写，具体含义需要查阅相关技术规格书。
- "M1"：通常用于区分同一类型的不同版本或配置，M可能表示“基本”、“模块化”或者某种功能级别。
磁阻传感器的工作原理是基于磁阻效应，即当通过材料的电流方向与磁场方向不平行时，材料的电阻会发生变化，从而实现对磁场强度、方向等物理量的非接触式检测。KMY20M1磁阻传感器可能应用于汽车电子、工业自动化、消费电子、物联网等领域中的速度、位置、角度、振动等磁性感应应用。为了获取更详细的信息，如工作原理、尺寸、精度等级、封装形式以及应用环境要求等，需参阅KMY公司提供的官方数据手册和技术规格说明。
